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mwe6ic9080nr1 MWE6IC9080GNR1 mwe6ic9080nbr1 1 rf device data freescale semiconductor rf ldmos wideband integrated power amplifiers the mwe6ic9080n wideband integrated circuit is designed with on--chip matching that makes it usable from 865 to 960 mhz. this multi--stage structure is rated for 26 to 32 volt operation and covers all typical cellular base station modulations. ? typical gsm performance: v dd =28volts,i dq1 = 230 ma, i dq2 = 630 ma, p out = 80 watts cw frequency g ps (db) pae (%) 920 mhz 29.0 49.7 940 mhz 28.8 51.6 960 mhz 28.5 52.3 ? capable of handling 10:1 vswr, @ 32 vdc, 940 mhz, p out = 128 watts cw (3 db input overdrive from rated p out ), designed for enhanced ruggedness ? stable into a 5:1 vswr. all spurs below --60 dbc @ 1 mw to 80 watts cw p out ? typical p out @ 1 db compression point ? 90 watts cw ? typical gsm edge performance: v dd =28volts,i dq1 = 230 ma, i dq2 = 630 ma, p out = 35 watts avg. frequency g ps (db) pae (%) sr1 @ 400 khz (dbc) sr2 @ 600 khz (dbc) evm (% rms) 920 mhz 30.0 37.0 -- 6 2 -- 7 5 0.8 940 mhz 30.0 37.8 -- 6 2 -- 7 5 1.2 960 mhz 29.5 38.0 -- 6 2 -- 7 5 1.5 features ? characterized with series equival ent large--signal impedance parameters and common source scattering parameters ? on--chip matching (50 ohm input, dc blocked) ? integrated quiescent current temperatur e compensation with enable/disable function (1) ? integrated esd protection ? 225 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. 1. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf. select documentation/application notes -- an1977 or an1987. document number: mwe6ic9080n rev. 0, 4/2010 freescale semiconductor technical data 865--960 mhz, 80 w cw, 28 v gsm, gsm edge rf ldmos wideband integrated power amplifiers mwe6ic9080nr1 MWE6IC9080GNR1 mwe6ic9080nbr1 case 1618--02 to--270 wb--14 plastic mwe6ic9080nr1 case 1621--02 to--270 wb--14 gull plastic MWE6IC9080GNR1 case 1617--02 to--272 wb--14 plastic mwe6ic9080nbr1 figure 1. functional block diagram figure 2. pin connections note: exposed backside of the package is the source terminal for the transistors. nc v gs1 rf in v gs1 rf out /v ds2 1 2 3 4 7 8 14 v gs2 9 10 11 v ds1 v gs2 nc nc v ds1 rf in nc rf out /v ds2 13 6 12 5 (top view) quiescent current temperature compensation (1) v ds1 rf in v gs1 rf out /v ds2 v gs2 v ds1 v gs2 v gs1 ? freescale semiconductor, inc., 2010. a ll rights reserved.
2 rf device data freescale semiconductor mwe6ic9080nr1 MWE6IC9080GNR1 mwe6ic9080nbr1 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +66 vdc gate--source voltage v gs --0.5, +6 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c input power p in 20.5 dbm table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case gsm application (case temperature 80 c, stage 1, 28 vdc, i dq1 = 230 ma p out = 80 w cw, 940 mhz) stage 2, 28 vdc, i dq2 = 630 ma gsm edge application (case temperature 80 c, stage 1, 28 vdc, i dq1 = 230 ma p out = 40 w cw, 940 mhz) stage 2, 28 vdc, i dq2 = 630 ma r jc 3.5 0.52 3.6 0.54 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1b (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iii (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit stage 1 ? off characteristics zero gate voltage drain leakage current (v ds =66vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 1 ? on characteristics gate threshold voltage (v ds =10vdc,i d =33 adc) v gs(th) 1.5 2 3.5 vdc gate quiescent voltage (v ds =28vdc,i dq1 = 230 madc) v gs(q) ? 2.7 ? vdc fixture gate quiescent voltage (v dd =28vdc,i dq1 = 230 madc, measured in functional test) v gg(q) 15 17 19 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. (continued)
mwe6ic9080nr1 MWE6IC9080GNR1 mwe6ic9080nbr1 3 rf device data freescale semiconductor table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit stage 2 ? off characteristics zero gate voltage drain leakage current (v ds =66vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 2 ? on characteristics gate threshold voltage (v ds =10vdc,i d = 270 adc) v gs(th) 1.5 2 3.5 vdc gate quiescent voltage (v ds =28vdc,i dq2 = 630 madc) v gs(q) ? 2.7 ? vdc fixture gate quiescent voltage (v dd =28vdc,i dq2 = 630 madc, measured in functional test) v gg(q) 16.5 18.5 20.5 vdc drain--source on--voltage (v gs =10vdc,i d =1adc) v ds(on) 0.1 0.45 0.8 vdc functional tests (1) (in freescale test fixture, 50 ohm system) v dd =28vdc,p out =80wcw,i dq1 = 230 ma, i dq2 = 630 ma, f = 960 mhz power gain g ps 27.0 28.5 30.5 db power added efficiency pae 48.0 52.3 ? % input return loss irl ? -- 2 8 -- 1 0 db typical broadband performance (in freescale test fixture, 50 ohm system) v dd =28vdc,p out =80wcw,i dq1 = 230 ma, i dq2 = 630 ma frequency g ps (db) pae (%) irl (db) 920 mhz 29.0 49.7 -- 2 4 940 mhz 28.8 51.6 -- 2 8 960 mhz 28.5 52.3 -- 2 8 typical performances (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq1 = 230 ma, i dq2 = 630 ma, 920--960 mhz bandwidth characteristic symbol min typ max unit p out @ 1 db compression point, cw p1db ? 90 ? w imd symmetry @ 100 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 28 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 30 ? mhz quiescent current accuracy over temperature (2) with 4.12 k ? gate feed resistors (--30 to 85 c) stage 1 stage 2 ? i qt ? 2.6 2.6 ? % gain flatness in 40 mhz bandwidth @ p out =80wcw g f ? 0.7 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.039 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.008 ? dbm/ c 1. part internally matched both on input and output. 2. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf. select documentation/application notes -- an1977 or an1987. (continued)
4 rf device data freescale semiconductor mwe6ic9080nr1 MWE6IC9080GNR1 mwe6ic9080nbr1 table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) typical gsm edge performances (in freescale gsm edge test fixture, 50 ohm system) v dd =28vdc,p out =35wavg.,i dq1 = 230 ma, i dq2 = 630 ma, 920--960 mhz edge modulation frequency g ps (db) pae (%) sr1 @ 400 khz (dbc) sr2 @ 600 khz (dbc) evm (% rms) 920 mhz 30.0 37.0 -- 6 2 -- 7 5 0.8 940 mhz 30.0 37.8 -- 6 2 -- 7 5 1.2 960 mhz 29.5 38.0 -- 6 2 -- 7 5 1.5
mwe6ic9080nr1 MWE6IC9080GNR1 mwe6ic9080nbr1 5 rf device data freescale semiconductor figure 3. mwe6ic9080nr1(gnr1)(nbr1 ) test circuit component layout cut out area mwe6ic9080n rev. 2 c2 c17 v ds1 c22 c7 c8 c20 c11 c1 c3 c4 c5 c6 c9 c10 c24 c25 c21 c12 c14 c13 c15 c16 c18 c19 c23 r1 r2 v ds2 v ds2 v ds1 v gs2 v gs1 *c6 is mounted vertically. table 6. mwe6ic9080nr1(gnr1)(nbr1) test ci rcuit component designations and values part description part number manufacturer c1, c2 6.8 pf chip capacitors atc100b6r8ct500xt atc c3, c4 4.7 pf chip capacitors atc100b4r7ct500xt atc c5, c7, c8, c9, c10, c11, c12, c13, c14 33 pf chip capacitors atc100b330jt500xt atc c6 4.3 pf chip capacitor atc100b4r3ct500xt atc c15, c16, c17, c18, c19, c20, c21 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c22, c23 470 f, 63 v electrolytic capacitors, radial mcgpr63v477m13x26--rh multicomp c24 0.1 pf chip capacitor atc100b0r1bt500xt atc c25 1.0 pf chip capacitor atc100b1r0bt500xt atc r1, r2 4.12 k ? , 1/4 w chip resistors crcw12064k12fkea vishay pcb 0.030 , r =2.8 is680?280 isola
6 rf device data freescale semiconductor mwe6ic9080nr1 MWE6IC9080GNR1 mwe6ic9080nbr1 typical characteristics irl g ps , power gain (db) irl, input return loss (db) f, frequency (mhz) 880 22 840 24 g ps v dd =28vdc,p out =80wcw i dq1 = 230 ma, i dq2 = 630 ma 32 64 31 60 29 56 48 24 32 860 980 900 920 irl figure 4. power gain, input return loss and power added efficiency versus frequency @ p out = 80 watts cw -- 2 4 -- 2 0 -- 2 2 -- 3 0 30 26 25 40 28 940 960 -- 2 6 -- 2 8 pae pae, power added efficiency (%) 820 28 27 23 36 44 52 f, frequency (mhz) figure 5. power gain, input return loss, evm and power added efficiency versus frequency @ p out = 35 watts avg. g ps 22 32 0 45 -- 3 0 -- 2 2 irl, input return loss (db) -- 2 0 -- 2 6 31 35 30 30 29 2.5 28 2 27 1 pae, power added efficiency (%) g ps , power gain (db) pae evm evm, error vector magnitude (% rms) v dd =28vdc,p out =35wavg. i dq1 = 230 ma, i dq2 = 630 ma edge modulation 880 840 860 980 900 920 940 960 820 100 -- 6 0 -- 1 0 0.1 10 -- 2 0 -- 3 0 -- 4 0 -- 5 0 two--tone spacing (mhz) figure 6. intermodulation distortion products versus two--tone spacing imd, intermodulatio n distortion (dbc) 1 im7--u im5--l im3--l im7--l im3--u v dd =28vdc,p out = 100 w (pep), i dq1 = 230 ma i dq2 = 630 ma, two--tone measurements (f1 + f2)/2 = center frequency of 940 mhz 300 25 31 0 60 v dd =28vdc i dq1 = 230 ma i dq2 = 630 ma 10 1 28 27 26 30 20 10 p out , output power (watts) cw figure 7. power gain and power added efficiency versus output power g ps , power gain (db) pae , power added efficiency ( % ) g ps 30 29 100 50 40 pae 920 mhz 940 mhz 960 mhz 920 mhz 940 mhz 960 mhz 26 25 24 23 40 25 1.5 0.5 -- 2 4 -- 2 8 im5--u
mwe6ic9080nr1 MWE6IC9080GNR1 mwe6ic9080nbr1 7 rf device data freescale semiconductor typical characteristics figure 8. evm versus frequency f, frequency (mhz) p out =60wavg. 50 w avg. 35 w avg. evm, error vector magnitude (% rms) 980 0 6 880 3 1 960 940 920 900 4 2 5 v dd =28vdc i dq1 = 230 ma, i dq2 = 630 ma edge modulation -- 7 5 -- 4 0 0 p out , output power (watts) -- 4 5 -- 5 0 -- 5 5 -- 6 5 20 figure 9. spectral regrowth at 400 khz versus output power spectral regrowth @ 400 khz (dbc) 40 120 -- 6 0 -- 7 0 60 80 100 v dd =28vdc i dq1 = 230 ma, i dq2 = 630 ma edge modulation 920 mhz 940 mhz 960 mhz -- 8 5 -- 5 0 0 p out , output power (watts) -- 5 5 -- 6 0 -- 6 5 -- 7 0 -- 7 5 20 figure 10. spectral regrowth at 600 khz versus output power spectral regrowth @ 600 khz (dbc) 40 120 60 80 100 v dd =28vdc i dq1 = 230 ma, i dq2 = 630 ma edge modulation 940 mhz 960 mhz 920 mhz p out , output power (watts) avg. 300 4 10 8 6 0 10 1 2 24 60 48 36 0 12 figure 11. evm and drain efficiency versus output power evm, error vector magnitude (% rms) evm d d , drain efficiency (%) v dd =28vdc i dq1 = 230 ma, i dq2 = 630 ma edge modulation 920 mhz 940 mhz 960 mhz 920 mhz 960 mhz figure 12. broadband frequency response 0 36 750 f, frequency (mhz) v dd =28vdc p in =0dbm i dq1 = 230 ma i dq2 = 630 ma 24 18 12 800 gain (db) 30 gain 850 900 950 1000 1050 1100 1150 irl -- 3 0 0 -- 5 -- 1 0 -- 1 5 -- 2 0 irl (db) 6 -- 2 5 -- 8 0 940 mhz 100
8 rf device data freescale semiconductor mwe6ic9080nr1 MWE6IC9080GNR1 mwe6ic9080nbr1 gsm test signal figure 13. edge spectrum -- 1 0 -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 6 0 -- 7 0 -- 8 0 -- 9 0 --100 200 khz span 2 mhz center 1.96 ghz -- 11 0 400 khz 600 khz 400 khz 600 khz (db) reference power vwb = 30 khz sweep time = 70 ms rbw = 30 khz v dd =28vdc,i dq1 = 230 ma, i dq2 = 630 ma, p out =80wcw f mhz z in ? z load ? 820 56.91 -- j7.34 1.22 -- j0.47 840 52.38 -- j6.36 1.26 -- j0.26 860 49.30 -- j5.92 1.35 -- j0.58 880 45.68 -- j4.07 1.44 + j0.14 900 44.22 -- j2.13 1.54 + j0.33 920 42.43 -- j0.62 1.62 + j0.49 940 41.50 + j1.76 1.74 + j0.66 960 42.19 + j3.25 1.91 + j0.82 980 43.07 + j3.14 2.08 + j0.94 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 14. series equivalent input and load impedance z in z load device under test output matching network
mwe6ic9080nr1 MWE6IC9080GNR1 mwe6ic9080nbr1 9 rf device data freescale semiconductor package dimensions
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18 rf device data freescale semiconductor mwe6ic9080nr1 MWE6IC9080GNR1 mwe6ic9080nbr1 product documentation and software refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family ? an3263: bolt down mounting method for high power rf transistors and rfics in over--molded plastic packages ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 apr. 2010 ? initial release of data sheet
mwe6ic9080nr1 MWE6IC9080GNR1 mwe6ic9080nbr1 19 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mwe6ic9080n rev. 0, 4/2010

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